收藏本站
NTZD5110N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
?
60
?
?
71
?
?
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 60 V
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
T J = 25 ° C
?
?
?
?
?
?
1.0
500
100
m A
nA
V DS = 50 V
T J = 85 ° C
?
?
100
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
V DS = 0 V, V GS = " 10 V
V DS = 0 V, V GS = " 5.0 V
?
?
?
?
?
?
" 10
450
150
m A
nA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain?to?Source On Resistance
Forward Transconductance
V GS(TH)
V GS(TH) /T J
R DS(on)
g FS
V GS = V DS , I D = 250 m A
?
V GS = 10 V, I D = 500 mA
V GS = 4.5 V, I D = 200 mA
V DS = 5.0 V, I D = 200 mA
1.0
?
?
?
?
?
4.0
1.19
1.33
80
2.5
?
1.6
2.5
?
V
mV/ ° C
W
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
?
24.5
?
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 20 V
?
?
4.2
2.2
?
?
Total Gate Charge
Q G(TOT)
?
0.7
?
nC
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V;
I D = 200 mA
?
?
?
0.1
0.3
0.1
?
?
?
SWITCHING CHARACTERISTICS (Note 4)
Turn?On Delay Time
t d(ON)
?
12
?
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DD = 30 V,
I D = 200 mA, R G = 10 W
?
?
?
7.3
63.7
30.6
?
?
?
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 200 mA
T J = 25 ° C
T J = 85 ° C
?
?
0.8
0.7
1.2
?
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface?mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTZS3151PT5G MOSFET P-CH 20V 860MA SOT-563
NV06P00472J-- THERMISTOR NTC DISK 4.7KOHM 5%
NVB25P06T4G MOSFET P-CH 60V 27.5A D2PAK
NVB6410ANT4G MSOFET N-CH 100V 76A D2PAK
NVD4815NT4G MOSFET N-CH 30V 6.9A DPAK-4
NVD5117PLT4G MOSFET P-CH 60V 61A DPAK
NVD5803NT4G MOSFET N-CH 40V 85A DPAK
NVD5807NT4G MOSFET N-CH 40V 23A DPAK
相关代理商/技术参数
NTZJ3AT1EV 功能描述:LCD 触摸面板 RoHS:否 制造商:3M Touch Systems 类型:P-MVA 大小:22 in 绝缘电阻: 封装:Bulk
NTZJCAT1EV4 制造商:OMRON AUTOMATION AND SAFETY 功能描述:SOFTWARE CD-ROM V4.2
NT-ZJCAT1-EV4 功能描述:LCD 触摸面板 NTST v4.7 Software RoHS:否 制造商:3M Touch Systems 类型:P-MVA 大小:22 in 绝缘电阻: 封装:Bulk
NTZJCAT1EV4S 制造商:OMRON AUTOMATION AND SAFETY 功能描述:NTST V4.7 SOFTWARE UPGRADE
NT-ZJCAT1-EV4S 制造商:OMRON AUTOMATION AND SAFETY 功能描述:NTST V4.7 SOFTWARE UPGRADE 制造商:OMRON INDUSTRIAL AUTOMATION 功能描述:NTST v4.7 Software Upgrade
NTZS3151P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563
NTZS3151PT1G 功能描述:MOSFET -20V -950mA P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTZS3151PT1H 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 950MA 150 - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 950MA TR 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:REEL / PFET SOT563 20V 950MA TR